Alle Transistoren. TIP112L-TN3 Datenblatt

 

TIP112L-TN3 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: TIP112L-TN3

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Ptot): 15 W

Kollektor-Basis-Sperrspannung (Vcb): 100 V

Kollektor-Emitter-Sperrspannung (Vce): 100 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 2 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Kollektor-Kapazität (Cc): 100 pF

Kurzschluss-Stromverstärkung (hfe): 500

Transistorgehäuse: TO252

Ersatz (vergleichstyp) für TIP112L-TN3

TIP112L-TN3 PDF doc:

1.1. tip112l-tn3.pdf Size:184K _update

TIP112L-TN3
TIP112L-TN3

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and

4.1. tip110_tip111_tip112_to-220.pdf Size:228K _mcc

TIP112L-TN3
TIP112L-TN3

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy meets UL

4.2. tip112.pdf Size:74K _kec

TIP112L-TN3
TIP112L-TN3

SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS : hFE=1000(Min.), VCE=4V, IC=1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP117. D ?3.60 0.20 T E 3.00 F 6.70

4.3. tip112f.pdf Size:444K _kec

TIP112L-TN3
TIP112L-TN3

SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 : hFE=1000(Min.), VCE=4V, IC=1A. _ E ?3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Voltage.

4.4. tip112.pdf Size:208K _lge

TIP112L-TN3
TIP112L-TN3

TIP112 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 100 V VCEO Col

4.5. htip112.pdf Size:52K _hsmc

TIP112L-TN3
TIP112L-TN3

Spec. No. : HE200203 HI-SINCERITY Issued Date : 2000.08.01 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Tempera

Anderen transistoren... TH430 , TH513 , TH560 , TH562 , THA15 , THA42TTD03 , THA92TTD03 , TIP110A , BC327 , TIP35CW , TIP36CW , TSD1664CY , TSD1760CP , TSD1858CH , TSD2098ACY , TSD2118CP , TSD2150A .

 


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