Alle Transistoren. US6H23 Datenblatt

 

US6H23 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: US6H23

Markierungscode: H23

Werkstoff: Si

Wandlerpolarität: Pre-Biased-NPN

Basis-Eingangswiderstand R1 = 4.7 kOhm

Gesamt-Verlustleistung (Pc): 1 W

Kollektor-Basis-Sperrspannung (Vcb): 20 V

Kollektor-Emitter-Sperrspannung (Vce): 20 V

Emitter-Basis-Sperrspannung (Veb): 12 V

DC-Kollektorstrom (Ic): 0.6 A

Betriebstemperatur (Tj): 150 °C

Transitfrequenz (ft): 150 MHz

DC-Stromverstärkung (hfe): 820

Transistorgehäuse: TUMT6

Ersatz (vergleichstyp) für US6H23

 

 

US6H23 Datasheet (PDF)

1.1. us6h23.pdf Size:399K _upd

US6H23
US6H23

US6H23 / IMH23 Datasheet NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. lOutline TUMT6 SMT6 Parameter Tr1 and Tr2 (4) (4) (5) (5) VCEO (6) 20V (6) (3) (3) VEBO 12V (2) (2) (1) (1) IC 600mA IMH23 US6H23 R1 4.7kW SOT-457 (SC-74) lFeatures 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low

1.2. us6h23.pdf Size:98K _rohm

US6H23
US6H23

US6H23 Transistors Dual digital transistors US6H23 Dimensions (Unit : mm) Features In addition to the features of regular digital transistors. TUMT6 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. Structure NPN silicon epi

 

Anderen transistoren... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

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BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |

 

 

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