Alle Transistoren. KRC663E Datenblatt

 

KRC663E . Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: KRC663E

Markierungscode: NO

Werkstoff: Si

Wandlerpolarität: Pre-Biased-NPN

Basis-Eingangswiderstand R1 = 22 kOhm

Gesamt-Verlustleistung (Pc): 0.2 W

Kollektor-Basis-Sperrspannung (Vcb): 50 V

Kollektor-Emitter-Sperrspannung (Vce): 50 V

Emitter-Basis-Sperrspannung (Veb): 5 V

DC-Kollektorstrom (Ic): 0.1 A

Betriebstemperatur (Tj): 150 °C

Transitfrequenz (ft): 250 MHz

DC-Stromverstärkung (hfe): 120

Transistorgehäuse: TESV

Ersatz (vergleichstyp) für KRC663E

 

 

KRC663E Datasheet (PDF)

5.1. krc660f-krc664f.pdf Size:387K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660F~KRC664F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS ·High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 ·Thin Fine Pitch Super m

5.2. krc660e-krc664e.pdf Size:50K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660E~KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 ·High Packing Density. _

 5.3. krc666e-krc672e.pdf Size:69K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC666E~KRC672E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3

5.4. krc660u-krc664u.pdf Size:51K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC660U~KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing

 5.5. krc666u-krc672u.pdf Size:428K _kec

KRC663E
KRC663E

SEMICONDUCTOR KRC666U~KRC672U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 ·With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ ·Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D

Anderen transistoren... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

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