Alle Transistoren. 2SA1319R Datenblatt

 

2SA1319R . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SA1319R

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.7 W

Kollektor-Basis-Sperrspannung (Vcb): 180 V

Kollektor-Emitter-Sperrspannung (Vce): 180 V

Kollektorstrom (Ic): 0.7 A

Höchste Sperrschichttemperatur (Tj): 125 °C

Transitfrequenz (ft): 120 MHz

Kollektor-Kapazität (Cc): 5 pF

Kurzschluss-Stromverstärkung (hfe): 100

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für 2SA1319R

 

2SA1319R Datasheet (PDF)

3.1. 2sa1319.pdf Size:114K _sanyo

2SA1319R
2SA1319R

Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions Hgih breakdown voltage. unit:mm Excellent hFE linearity. 2003A Wide ASO and highly resistant to breakdown. [2SA1319/2SC3332] Adoption of MBIT process. Switching Test Circuit JEDEC : TO-92 B : Base (For PNP, the polarity is re

4.1. 2sa1312.pdf Size:308K _toshiba

2SA1319R
2SA1319R

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Small package Abso

4.2. 2sa1315.pdf Size:220K _toshiba

2SA1319R
2SA1319R

4.3. 2sa1316.pdf Size:317K _toshiba

2SA1319R
2SA1319R

2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for the First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: r = 2.0

4.4. 2sa1313.pdf Size:192K _toshiba

2SA1319R
2SA1319R

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage: VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Ratings (Ta =

4.5. 2sa1314.pdf Size:161K _toshiba

2SA1319R
2SA1319R

2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit: mm Audio Power Applications High DC current gain and excellent linearity : h = 140 to 600 (V = -1 V, I = -0.5 A) FE (1) CE C : h = 60 (min), 120 (typ.), (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage : V = -0.5 V (max) (I = -2 A, I = -50 mA) CE (sat) C B

4.6. 2sa1318.pdf Size:143K _sanyo

2SA1319R
2SA1319R

4.7. 2sa1317.pdf Size:144K _sanyo

2SA1319R
2SA1319R

4.8. 2sa1310.pdf Size:37K _panasonic

2SA1319R
2SA1319R

Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC3312 4.0 0.2 Features Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base

4.9. 2sa1310 e.pdf Size:41K _panasonic

2SA1319R
2SA1319R

Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC3312 4.0 0.2 Features Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base

4.10. 2sa1318.pdf Size:78K _secos

2SA1319R

2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Large Current Capacity and Wide ASO G H APPLICATIONS ?Emitter ? Capable of Being Used in The Low Frequency to High ?Collector ?Base Frequency Range J A D Millimeter REF. CLASSIFICATION OF hF

4.11. 2sa1313 sot-23-3l.pdf Size:209K _lge

2SA1319R
2SA1319R

2SA1313 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Excellent hFE Linearity 2.80 1.60 : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90 MARKING : ACO,ACY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value

4.12. 2sa1312.pdf Size:1194K _kexin

2SA1319R
2SA1319R

SMD Type Transistors PNP Transistors 2SA1312 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=-100mA 1 2 ● Collector Emitter Voltage VCEO=-120V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 ● Complementary to 2SC3324 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collecto

4.13. 2sa1313.pdf Size:996K _kexin

2SA1319R
2SA1319R

SMD Type or SMD Type TransistICs PNP Transistors 2SA1313 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage: VCEO = -50 V (min) 1 2 Small package +0.1 +0.05 0.95-0.1 0.1-0.01 ● Complementary to 2SC3325 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-e

4.14. 2sa1314.pdf Size:1163K _kexin

2SA1319R
2SA1319R

SMD Type Transistors PNP Transistors 2SA1314 Features 1.70 0.1 Low Saturation Voltage : VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package 0.42 0.1 0.46 0.1 Complementary to 2SC2982 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 V Emitter - Base

Anderen transistoren... 2SA1317T , 2SA1317U , 2SA1318 , 2SA1318R , 2SA1318S , 2SA1318T , 2SA1318U , 2SA1319 , BC107 , 2SA1319S , 2SA1319T , 2SA1319U , 2SA132 , 2SA1320 , 2SA1321 , 2SA1322 , 2SA1323 .

 


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