Alle Transistoren. 2SA1395 Datenblatt

 

2SA1395 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SA1395

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 15 W

Kollektor-Basis-Sperrspannung (Vcb): 100 V

Kollektorstrom (Ic): 2 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Kurzschluss-Stromverstärkung (hfe): 120

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für 2SA1395

 

2SA1395 Datasheet (PDF)

1.1. 2sa1395.pdf Size:133K _nec

2SA1395
2SA1395

DATA SHEET SILICON POWER TRANSISTOR 2SA1395 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that does not require

4.1. 2sa1392.pdf Size:173K _sanyo

2SA1395
2SA1395

Ordering number:EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions Adoption of FBET process. unit:mm AF amp. 2003A [2SA1392/2SC3383] JEDEC : TO-92 B : Base ( ) : 2SA1392 EIAJ : SC-43 C : Collector SANYO : NF E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Uni

4.2. 2sa1391.pdf Size:236K _sanyo

2SA1395
2SA1395

Ordering number:EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions Adoption of FBET process. unit:mm AF amp. 2003A Low-noise use. [2SA1391/2SC3382] Noise Test Circuit JEDEC : TO-92 B : Base ( ) : 2SA1391 EIAJ : SC-43 C : Collector SANYO : NP E : Emitter Specifications Absolute Maximum Ratings at T

4.3. 2sa1394.pdf Size:173K _nec

2SA1395
2SA1395

4.4. 2sa1396.pdf Size:173K _nec

2SA1395
2SA1395

4.5. 2sa1390.pdf Size:23K _hitachi

2SA1395
2SA1395

2SA1390 Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SA1390 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power dissipation PC 300 mW Junction tempe

4.6. 2sa1399.pdf Size:59K _isahaya

2SA1395
2SA1395

????????? http://www.idc-com.co.jp ?854-0065 ??????????6-41 ??????????? ??????????????????????????????????????????????????????? ?????????????????????????????????????????????????????? ????????????????????????????????????? ??????????????? ?????????????????????????????????????????????????????? ??????????????????????????????????????????????????? ?????????????????????????????

4.7. 2sa1396.pdf Size:225K _jmnic

2SA1395
2SA1395

JMnic Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SC3568 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBO

4.8. 2sa1396.pdf Size:171K _inchange_semiconductor

2SA1395
2SA1395

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SC3568 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings

Anderen transistoren... 2SA1391U , 2SA1392 , 2SA1392R , 2SA1392S , 2SA1392T , 2SA1392U , 2SA1393 , 2SA1394 , 2N60 , 2SA1396 , 2SA1397 , 2SA1398 , 2SA1399 , 2SA14 , 2SA1400 , 2SA1401 , 2SA1402 .

 


2SA1395
  2SA1395
  2SA1395
  2SA1395
 
2SA1395
  2SA1395
  2SA1395
 

social 

Liste

Letztes Update

BJT BCP69T1G | BCP68T1G | BCP56T3G | BCP56T1G | BCP56-16T3G | BCP56-16T1G | BCP5616Q | BCP56-10T3G | BCP56-10T1G | BCP53T1G | BCP53-16T3G | BCP53-16T1G | BCP5316Q | BCP53-10T1G | BCP3904 | BCM857DS | BCM857BV | BCM857BS | BCM856DS | BCM856BS |