Alle Transistoren. 2SB1158 Datenblatt

 

2SB1158 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SB1158

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 70 W

Kollektor-Basis-Sperrspannung (Vcb): 120 V

Kollektor-Emitter-Sperrspannung (Vce): 120 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 6 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Kurzschluss-Stromverstärkung (hfe): 90

Transistorgehäuse: TO126

Ersatz (vergleichstyp) für 2SB1158

 

2SB1158 Datasheet (PDF)

1.1. 2sb1158.pdf Size:162K _jmnic

2SB1158
2SB1158

JMnic Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vo

1.2. 2sb1158.pdf Size:128K _inchange_semiconductor

2SB1158
2SB1158

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Complement to type 2SD1713 Ў¤ High fT Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP P

4.1. 2sb1150.pdf Size:146K _nec

2SB1158
2SB1158

4.2. 2sb1151.pdf Size:150K _nec

2SB1158
2SB1158

4.3. 2sb1155.pdf Size:61K _panasonic

2SB1158
2SB1158

Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm Features 15.0 0.3 5.0 0.2 Low collector to emitter saturation voltage VCE(sat) 11.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC ? 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0

4.4. 2sb1156.pdf Size:61K _panasonic

2SB1158
2SB1158

Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm Features Low collector to emitter saturation voltage VCE(sat) 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC ? 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw A

4.5. 2sb1154.pdf Size:61K _panasonic

2SB1158
2SB1158

Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm Features 15.0 0.3 5.0 0.2 Low collector to emitter saturation voltage VCE(sat) 11.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC ? 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0

4.6. 2sb1151.pdf Size:223K _utc

2SB1158
2SB1158

UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SD1691 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R SOT-223 E C B Tape Reel 2SB1151L-x-T60-K 2SB1151G-x-T60-K TO-126 E C B Bu

4.7. 2sb1157.pdf Size:165K _jmnic

2SB1158
2SB1158

JMnic Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SD1712 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vo

4.8. 2sb1155.pdf Size:197K _jmnic

2SB1158
2SB1158

JMnic Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SD1706 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

4.9. 2sb1151.pdf Size:218K _jmnic

2SB1158
2SB1158

JMnic Product Specification Silicon PNP Power Transistors 2SB1151 DESCRIPTION · ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

4.10. 2sb1156.pdf Size:162K _jmnic

2SB1158
2SB1158

JMnic Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

4.11. 2sb1159.pdf Size:159K _jmnic

2SB1158
2SB1158

JMnic Product Specification Silicon PNP Power Transistors 2SB1159 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vo

4.12. 2sb1154.pdf Size:206K _jmnic

2SB1158
2SB1158

JMnic Product Specification Silicon PNP Power Transistors 2SB1154 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

4.13. 2sb1157.pdf Size:128K _inchange_semiconductor

2SB1158
2SB1158

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Complement to type 2SD1712 Ў¤ High fT Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP P

4.14. 2sb1155.pdf Size:153K _inchange_semiconductor

2SB1158
2SB1158

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Complement to type 2SD1706 Ў¤ Low collector saturation voltage Ў¤ Satisfactory linearity of hFE APPLICATIONS Ў¤ For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL V

4.15. 2sb1151.pdf Size:181K _inchange_semiconductor

2SB1158
2SB1158

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SD1691 Ў¤ Low saturation voltage Ў¤ Large current Ў¤ High total power dissipation:PT=1.3W Ў¤ Large current capability and wide SOA APPLICATIONS Ў¤ DC-DC converter Ў¤ Driver of solenoid or motor PINNING PIN 1 2 3 Emitter Collector;connected to

4.16. 2sb1156.pdf Size:128K _inchange_semiconductor

2SB1158
2SB1158

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Complement to type 2SD1707 Ў¤ Low collector saturation voltage Ў¤ Large collector current APPLICATIONS Ў¤ For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

4.17. 2sb1159.pdf Size:128K _inchange_semiconductor

2SB1158
2SB1158

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1159 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Complement to type 2SD1714 Ў¤ High fT Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICP P

4.18. 2sb1154.pdf Size:156K _inchange_semiconductor

2SB1158
2SB1158

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1154 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Complement to type 2SD1705 Ў¤ Low collector saturation voltage Ў¤ Satisfactory linearity of hFE APPLICATIONS Ў¤ For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL V

4.19. st2sb1151t.pdf Size:349K _semtech

2SB1158

ST 2SB1151T PNP Epitaxial Silicon Power Transistor E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 5 A Collector Current (PW = 10 ms) -ICP 8 A Base Current -IB 1 A O Collector Power Dissipation (a

Anderen transistoren... 2SB1150 , 2SB1151 , 2SB1152 , 2SB1153 , 2SB1154 , 2SB1155 , 2SB1156 , 2SB1157 , SS8050 , 2SB1159 , 2SB116 , 2SB1160 , 2SB1161 , 2SB1162 , 2SB1163 , 2SB1164 , 2SB1165 .

 


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