Alle Transistoren. 2SB1183 Datenblatt

 

2SB1183 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SB1183

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 15 W

Kollektor-Basis-Sperrspannung (Vcb): 40 V

Kollektor-Emitter-Sperrspannung (Vce): 40 V

Emitter-Basis-Sperrspannung (Veb): 5 V

Kollektorstrom (Ic): 2 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Kurzschluss-Stromverstärkung (hfe): 20000

Transistorgehäuse: TO218

Ersatz (vergleichstyp) für 2SB1183

 

2SB1183 Datasheet (PDF)

1.1. 2sb1183.pdf Size:42K _rohm

2SB1183

2SB1183 / 2SB1239 / 2SB786F Transistors Transistors 2SD1759 / 2SD1861 / 2SD947F (96-126-B23) (94S-321-D23) 283

1.2. 2sb1183 2sb1239.pdf Size:67K _rohm

2SB1183
2SB1183

2SB1183 / 2SB1239 Transistors Power transistor (-40V, -2A) 2SB1183 / 2SB1239 External dimensions (Units : mm) Features 1) Darlington connection for high DC current gain. 2SB1183 2) Built-in 4k? resistor between base and emitter. 5.5 1.5 3) Complements the 2SD1759 / 2SD1861. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM : CPT3 (1) Base(Gate) RBE 4k? (2) Collector

4.1. 2sb1188gp.pdf Size:94K _update

2SB1183
2SB1183

CHENMKO ENTERPRISE CO.,LTD 2SB1188GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05 * PNP Switching Transistor MARKING * HFE(P):NO +

4.2. 2sb1182p-q-r.pdf Size:39K _update

2SB1183

SMD Type Transistors Medium Power Transistor 2SB1182 TO-252 Unit: mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). Epitaxial planar type PNP silicon transistor 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO

4.3. 2sb1184p-q-r.pdf Size:39K _update

2SB1183

SMD Type Transistors Power transistor 2SB1184 TO-252 Unit: mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). PNP silicon transistor. Epitaxial planar type 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V

4.4. 2sb1188k.pdf Size:364K _update

2SB1183
2SB1183

2SB1188K PNP Silicon Medium Power Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD

4.5. 2sb1184 3ca1184.pdf Size:196K _update

2SB1183
2SB1183

2SB1184(3CA1184) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般功率放大。 Purpose: Power amplifier applications。 特点:饱和压降小,与 2SD1760(3DA1760) 互补。 Features: Low V complements the 2SD1760(3DA1760). CE(sat), 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -60 V CBO V -50 V CEO

4.6. 2sb1182gp.pdf Size:80K _update

2SB1183
2SB1183

CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (DPAK) DPAK * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .094 (2.38) CONSTRUCTION .086 (2.19) .022 (0.55) * PNP Switching Transistor .018 (0.45) (1) (3

4.7. 2sb1185 3ca1185.pdf Size:472K _update

2SB1183
2SB1183

2SB1185(3CA1185) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于功率放大。/Purpose: Power amplifier applications. 特点:V 低,与 2SD1762(3DA1762)互补。 CE(sat) Features: Low V ,complementary pair with 2SD1762(3DA1762). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -60 V CBO V -50 V CEO

4.8. 2sb1185 1-5.pdf Size:132K _rohm

2SB1183
2SB1183

4.9. 2sb1184 2sb1243.pdf Size:244K _rohm

2SB1183
2SB1183

Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 External dimensions (Units : mm) Features 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) 2.50.2 6.80.2 2.3 +0.2 6.50.2 -0.1 C0.5 (IC/IB = -2A / -0.2A) 5.1 +0.2 -0.1 0.50.1 2) Complements th

4.10. 2sb1260 2sb1181 2sb1241.pdf Size:140K _rohm

2SB1183
2SB1183

Power Transistor (?80V, ?1A) 2SB1260 / 2SB1181 / 2SB1241 ?Features ?Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO=??80V, IC = ??1A 2.3+0.2 6.50.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.50.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.1 0.650.1 0.75 (1) (2) (3) 0.9 0.4+0.1 0.550.1 0.40.

4.11. 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf Size:130K _rohm

2SB1183
2SB1183

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2

4.12. 2sb1189.pdf Size:42K _rohm

2SB1183

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

4.13. 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf Size:48K _rohm

2SB1183

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

4.14. 2sb1184.pdf Size:75K _rohm

2SB1183
2SB1183

2SB1184 / 2SB1243 Transistors Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features External dimensions (Units : mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) 2.50.2 6.80.2 2.3 +0.2 6.50.2 -0.1 (IC/IB = -2A / -0.2A) C0.5 5.1 +0.2 -0.1 0.50.1 2) Complements the 2SD1760 / 2SD1864. 0.65Max. 0.650.1 0.75 0.9 0.550.1 0.50.1 Structure 2.30.2 2.30.

4.15. 2sb1182 2sb1240.pdf Size:147K _rohm

2SB1183
2SB1183

Medium power transistor (?32V, ?2A) 2SB1182 / 2SB1240 ?Features ?Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1182 2SB1240 VCE(sat) = ?0.5V (Typ.) 2.50.2 6.80.2 (IC/IB = ?2A / ?0.2A) 2.3+0.2 6.50.2 -0.1 C0.5 2) Complements 2SD1758 / 2SD1862. 5.1+0.2 -0.1 0.50.1 0.65Max. 0.650.1 ?Structure 0.75 0.9 0.50.1 Epitaxial planar type 0.550.1 PNP silicon transistor 2.30

4.16. 2sb1188.pdf Size:130K _rohm

2SB1183
2SB1183

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2

4.17. 2sb1186 1-2.pdf Size:62K _rohm

2SB1183
2SB1183

4.18. 2sb1189 2sb1238.pdf Size:135K _rohm

2SB1183
2SB1183

Medium power transistor(?80V, ?0.7A) 2SB1189 / 2SB1238 ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=?80V, and 2SB1189 high current, IC=?0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1) (2) ?Absolute maximum ratings (Ta=25?C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-ba

4.19. 2sb1184 2sb1243 2sb1185.pdf Size:129K _rohm

2SB1183
2SB1183

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor (96-128-B57) 223 Transistors 2SB1184 / 2SB1243 / 2SB1185 FAbsolute maximum ratings (Ta = 25_C) FElectr

4.20. 2sb1180.pdf Size:102K _panasonic

2SB1183
2SB1183

Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching 7.00.3 3.50.2 Complementary to 2SD1750, 2SD1750A 3.00.2 0? to 0.15? 2.00.2 Features High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 1

4.21. 2sb1182.pdf Size:160K _utc

2SB1183
2SB1183

UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment

4.22. 2sb1188.pdf Size:255K _utc

2SB1183
2SB1183

UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES *High current output up to 3A *Low saturation voltage SOT-89 Lead-free: 2SB1188L Halogen-free: 2SB1188G ORDERING

4.23. 2sb1188.pdf Size:338K _secos

2SB1183
2SB1183

2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4 1 2 3 A FEATURES E C Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B D F G CLASSIFICATION OF

4.24. 2sb1185.pdf Size:161K _jmnic

2SB1183
2SB1183

JMnic Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec

4.25. 2sb1186.pdf Size:161K _jmnic

2SB1183
2SB1183

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1763 ·High breakdown voltage APPLICATIONS ·For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITI

4.26. 2sb1186a.pdf Size:161K _jmnic

2SB1183
2SB1183

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION · ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1763A ·High breakdown voltage APPLICATIONS ·For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDI

4.27. 2sb1187.pdf Size:153K _jmnic

2SB1183
2SB1183

JMnic Product Specification Silicon PNP Power Transistors 2SB1187 DESCRIPTION · ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta

4.28. 2sb1185.pdf Size:128K _inchange_semiconductor

2SB1183
2SB1183

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation votlage Ў¤ Complement to type 2SD1762 APPLICATIONS Ў¤ For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO

4.29. 2sb1186.pdf Size:128K _inchange_semiconductor

2SB1183
2SB1183

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation votlage Ў¤ Complement to type 2SD1763 Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Ў¤ Absolute maximum ratings(Ta=25Ў

4.30. 2sb1186a.pdf Size:128K _inchange_semiconductor

2SB1183
2SB1183

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation votlage Ў¤ Complement to type 2SD1763A Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Ў¤ Absolute maximum ratings(Ta=25

4.31. 2sb1187.pdf Size:121K _inchange_semiconductor

2SB1183
2SB1183

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1187 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low saturation voltage Ў¤ Complement to type 2SD1761 Ў¤ Excellent DC current gain characteristics Ў¤ Wide safe operating area APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Ў¤

4.32. 2sb1189.pdf Size:271K _htsemi

2SB1183
2SB1183

2SB1 1 8 9 TRANSISTOR(PNP) FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg

4.33. 2sb1188.pdf Size:321K _htsemi

2SB1183
2SB1183

2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage Collector Current -Continuous IC -2 A Collector Power Dissipation

4.34. 2sb1188 sot-89.pdf Size:242K _lge

2SB1183
2SB1183

2SB1188 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat). 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complements the 2SD1766 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40

4.35. 2sb1182.pdf Size:181K _lge

2SB1183
2SB1183

2SB1182(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 1

4.36. 2sb1184.pdf Size:210K _lge

2SB1183
2SB1183

2SB1184(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Vo

4.37. 2sb1189 sot-89.pdf Size:216K _lge

2SB1183
2SB1183

2SB1189 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complements to 2SD1767 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Unit

4.38. 2sb1182.pdf Size:1117K _wietron

2SB1183
2SB1183

2SB1182 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -40 VCEO V Collector-Emitter Voltage -32 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -2.0 Collector Power Dissipation PD 1.5 W Junction Temperature Tj +150 ?C

4.39. 2sb1184.pdf Size:451K _wietron

2SB1183
2SB1183

2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b P b Lead(Pb)-Free Features: 1.BASE 1.BASE 2.COLLECTOR 2.COLLECTOR * Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) ). 3.EMITTER 3.EMITTER TO-251 MAXIMUM RATINGS (TA=25?C unless otherwise noted) TO-251 Symbol Value Parameter Unit Collector-Base Voltage V -60 V CBO V -50 V Collector-Emitter Voltage CEO V Emitter-Ba

4.40. 2sb1188.pdf Size:761K _wietron

2SB1183
2SB1183

2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Collector-Base Voltage Vdc VCBO -40 Collector-Emitter Voltage Vdc VCEO -32 Emitter-Base Voltage Vdc VEBO -5 IC A(DC) -2 Collector Current ICP -3 A (Pulse)* PC W Collector Power Dissipation 0.5 % T , Tstg C Junction T

4.41. 2sb1188.pdf Size:525K _willas

2SB1183
2SB1183

2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight: 0.05 g RoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H" MAXIMUM RATINGS (TA=25? unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value Units

4.42. st2sb1188u.pdf Size:558K _semtech

2SB1183
2SB1183

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper

4.43. 2sb1182.pdf Size:1212K _kexin

2SB1183
2SB1183

SMD Type Transistors PNP Transistors 2SB1182 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Low VCE(sat).VCE(sat) = -0.5V ● Complementary to 2SD1758 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

4.44. 2sb1189.pdf Size:910K _kexin

2SB1183
2SB1183

SMD Type Transistors PNP Transistors 2SB1189 1.70 0.1 ■ Features ● High breakdown voltage, BVCEO=-80V, and High Current, IC=-0.7A ● Complementary to 2SD1767 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage

4.45. 2sb1184.pdf Size:1218K _kexin

2SB1183
2SB1183

SMD Type Transistors PNP Transistors 2SB1184 TO-252 Unit: mm +0.15 6.50-0.15 ■ Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Low VCE(sat).VCE(sat) = -0.5V ● Complementary to 2SD1760 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

4.46. 2sb1181.pdf Size:1089K _kexin

2SB1183
2SB1183

SMD Type Transistors PNP Transistors 2SB1181 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Hight breakdown voltage and high current. ● Low collector-emitter saturation voltage VCE(sat) ● Good hFE linearty. 0.127 ● Complementary to 2SD1733 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector

4.47. 2sb1188.pdf Size:878K _kexin

2SB1183
2SB1183

SMD Type Transistors SMD Type PNP Transistor 2SB1188 1.70 0.1 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3

Anderen transistoren... 2SB1176 , 2SB1177 , 2SB1178 , 2SB1179 , 2SB118 , 2SB1180 , 2SB1181 , 2SB1182 , 2N3904 , 2SB1184 , 2SB1185 , 2SB1186 , 2SB1186A , 2SB1187 , 2SB1188P , 2SB1188Q , 2SB1188R .

 


2SB1183
  2SB1183
  2SB1183
  2SB1183
 
2SB1183
  2SB1183
  2SB1183
 

social 

Liste

Letztes Update

BJT BCP69T1G | BCP68T1G | BCP56T3G | BCP56T1G | BCP56-16T3G | BCP56-16T1G | BCP5616Q | BCP56-10T3G | BCP56-10T1G | BCP53T1G | BCP53-16T3G | BCP53-16T1G | BCP5316Q | BCP53-10T1G | BCP3904 | BCM857DS | BCM857BV | BCM857BS | BCM856DS | BCM856BS |