Alle Transistoren. 2SB1188P Datenblatt

 

2SB1188P . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SB1188P

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Ptot): 0.5 W

Kollektor-Basis-Sperrspannung (Vcb): 40 V

Kollektor-Emitter-Sperrspannung (Vce): 40 V

Emitter-Basis-Sperrspannung (Veb): 10 V

Kollektorstrom (Ic): 2 A

Höchste Sperrschichttemperatur (Tj): 165 °C

Transitfrequenz (ft): 150 MHz

Kurzschluss-Stromverstärkung (hfe): 82

Transistorgehäuse: SOT89

Ersatz (vergleichstyp) für 2SB1188P

 

2SB1188P Datasheet (PDF)

3.1. 2sb1188gp.pdf Size:94K _update

2SB1188P
2SB1188P

CHENMKO ENTERPRISE CO.,LTD 2SB1188GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05 * PNP Switching Transistor MARKING * HFE(P):NO +

3.2. 2sb1188k.pdf Size:364K _update

2SB1188P
2SB1188P

2SB1188K PNP Silicon Medium Power Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD

3.3. 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf Size:130K _rohm

2SB1188P
2SB1188P

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2

3.4. 2sb1188.pdf Size:130K _rohm

2SB1188P
2SB1188P

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit: mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 / 2

3.5. 2sb1188.pdf Size:255K _utc

2SB1188P
2SB1188P

UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES *High current output up to 3A *Low saturation voltage SOT-89 Lead-free: 2SB1188L Halogen-free: 2SB1188G ORDERING

3.6. 2sb1188.pdf Size:338K _secos

2SB1188P
2SB1188P

2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4 1 2 3 A FEATURES E C Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B D F G CLASSIFICATION OF

3.7. 2sb1188.pdf Size:321K _htsemi

2SB1188P
2SB1188P

2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage Collector Current -Continuous IC -2 A Collector Power Dissipation

3.8. 2sb1188 sot-89.pdf Size:242K _lge

2SB1188P
2SB1188P

2SB1188 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat). 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complements the 2SD1766 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40

3.9. 2sb1188.pdf Size:761K _wietron

2SB1188P
2SB1188P

2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Collector-Base Voltage Vdc VCBO -40 Collector-Emitter Voltage Vdc VCEO -32 Emitter-Base Voltage Vdc VEBO -5 IC A(DC) -2 Collector Current ICP -3 A (Pulse)* PC W Collector Power Dissipation 0.5 % T , Tstg C Junction T

3.10. 2sb1188.pdf Size:525K _willas

2SB1188P
2SB1188P

2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight: 0.05 g RoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H" MAXIMUM RATINGS (TA=25? unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value Units

3.11. st2sb1188u.pdf Size:558K _semtech

2SB1188P
2SB1188P

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper

3.12. 2sb1188.pdf Size:878K _kexin

2SB1188P
2SB1188P

SMD Type Transistors SMD Type PNP Transistor 2SB1188 1.70 0.1 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3

Anderen transistoren... 2SB1181 , 2SB1182 , 2SB1183 , 2SB1184 , 2SB1185 , 2SB1186 , 2SB1186A , 2SB1187 , 8050 , 2SB1188Q , 2SB1188R , 2SB1189P , 2SB1189Q , 2SB1189R , 2SB119 , 2SB1190 , 2SB1191 .

 


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