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apt11gf120brd.pdf Principales características:

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APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated G Ultrafast Soft Recovery Antiparallel Diode E MAXIMUM RATINGS (IGBT) All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11GF120BRD UNIT VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20K ) 1200 Volts VGE Gate-Emitter Voltage 20 IC1 Continuous Collector Current @ TC = 25 C 22 IC2 Continuous Collector Current @ TC = 110 C 11 Amps ICM1 Pulsed Collector Current 1 @ TC =

 

Keywords - ALL TRANSISTORS. Principales características

 apt11gf120brd.pdf Design, MOSFET, Power

 apt11gf120brd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt11gf120brd.pdf Database, Innovation, IC, Electricity

 

 
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