Todos los transistores

ntmfs4c55n.pdf Principales características:

NTMFS4C55N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V CPU Power Delivery 30 V 78 A DC-DC Converters 5.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C ID 21.7 A G (4) Current RqJA TA = 80 C 16.3 (Note 1) Power Dissipation TA = 25 C PD 2.57 W S (1,2,3) RqJA (Note 1) N-CHANNEL MOSFET Continuous Drain TA = 25 C ID 34.8 A Current RqJA 10 s MARKING TA = 80 C 26.0 (Note 1) DIAGRAM Power D

Keywords - ALL TRANSISTORS. Principales características

 ntmfs4c55n.pdf Design, MOSFET, Power

 ntmfs4c55n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs4c55n.pdf Database, Innovation, IC, Electricity