rm150n100hd.pdf datasheet:

RM150N100HD N-Channel Super Trench Power MOSFET Description The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features VDS =100V,ID =150A RDS(ON)

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