svf11n65t svf11n65f.pdf Principales características:

svf11n65t_svf11n65fsvf11n65t_svf11n65f

SVF11N65T/F_Datasheet 11A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES 11A, 650V, RDS(on)(typ.)= 0.76 @VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. Package Marking Material Packing SVF11N65T TO-220-3L SVF11N65T Pb free Tube SVF11N65F TO-220F-3L

 

Keywords - ALL TRANSISTORS. Principales características

 svf11n65t svf11n65f.pdf Design, MOSFET, Power

 svf11n65t svf11n65f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 svf11n65t svf11n65f.pdf Database, Innovation, IC, Electricity