ap1605.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ap1605.pdf Principales características:

All Power Semiconductor Co.,Ltd V1.0 1 All Power Semiconductor Co.,Ltd V1.0 2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 2 -8V -3V VDS=-5V -2.5V -4V 1.5 1.5 -4.5V 1 1 -2.0V 125 C 0.5 0.5 25 C VGS=-1.5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 -VGS(Volts) -VDS (Volts) Figure 2 Transfer Characteristics (Note E) Fig 1 On-Region Characteristics (Note E) 1400 1.6 VGS=-1.8V VGS=-1.5V ID=-5A 1200 VGS=-2.5V 1.4 ID=-6A VGS=-1.8V 1000 17 VGS=-4.5V 1.2 5 ID=-8A 800 VGS=-2.5V 2 VGS=-4.5V 10 1 ID=-8A 600 VGS=-4.5V 0.8 400 0 25 50 75 100 125 150 175 0 0.1 0.2 0.3 0.4 0.5 0.6 -ID (A) 0 Temperature ( C) Figure 3 On-Resistance vs. Drain Current and Gate Figure 4 On-Resistance vs. Junction Temperature 18 Voltage (Note E) (Note E) 1600 1.0E+01 ID=-0.4A 1400 1.0