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aod11s60 aoi11s60.pdf Principales características:

AOD11S60/AOI11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD11S60 & AOI11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 2.7 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO252 TO251A DPAK D IPAK Top View Bottom View Top View Bottom View D D G G G S S D D S S S G G AOI11S60 AOD11S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC=25 C 11

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 aod11s60 aoi11s60.pdf Design, MOSFET, Power

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