aot20s60l aob20s60l aotf20s60l aotf20s60.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

aot20s60l aob20s60l aotf20s60l aotf20s60.pdf Principales características:

AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced MOSTM IDM 80A high voltage process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with guaranteed Eoss @ 400V 4.9 J avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested Top View TO-263 TO-220 TO-220F(3kVAC; 1s) D D2PAK D D G S S D S D S G G G AOT20S60L AOTF20S60(L) AOB20S60L Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT20S60L/AOB20S60L AOTF20S60 AOTF20S60L Units Drain-Source Voltage