aot27s60l aob27s60l aotf27s60l aotf27s60.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

aot27s60l aob27s60l aotf27s60l aotf27s60.pdf Principales características:

AOT27S60L/AOB27S60L/AOTF27S60L/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60L & AOB27S60L & AOTF27S60L & AOTF27S60 have been fabricated using the advanced IDM 110A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.16 levels of performance and robustness in switching Qg,typ 26nC applications. Eoss @ 400V 6 J By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested Top View TO-263 TO-220 TO-220F(3kVAC;1s) D2PAK D D D G S S D S D S G G G AOT27S60L AOTF27S60(L) AOB27S60L Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT27S60L/AOB27S60L AOTF27S60 AOTF27S60L Units Drain-Source Voltage