aot3n100 aotf3n100.pdf Principales características:
AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
Keywords - ALL TRANSISTORS. Principales características
aot3n100 aotf3n100.pdf Design, MOSFET, Power
aot3n100 aotf3n100.pdf RoHS Compliant, Service, Triacs, Semiconductor
aot3n100 aotf3n100.pdf Database, Innovation, IC, Electricity
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