Todos los transistores

aow11s65 aowf11s65.pdf Principales características:

AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 2.9 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View G G S G S D D S S D G D S G AOW11S65 AOWF11S65 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOW11S65 AOWF11S65 Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC=25 C 11 11*

Keywords - ALL TRANSISTORS. Principales características

 aow11s65 aowf11s65.pdf Design, MOSFET, Power

 aow11s65 aowf11s65.pdf RoHS Compliant, Service, Triacs, Semiconductor

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