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aow20s60 aowf20s60.pdf Principales características:

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 4.9 J guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View G G S G D D S S D G S D S G AOW20S60 AOWF20S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOW20S60 AOWF20S60 Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC=25 C 20 20*

Keywords - ALL TRANSISTORS. Principales características

 aow20s60 aowf20s60.pdf Design, MOSFET, Power

 aow20s60 aowf20s60.pdf RoHS Compliant, Service, Triacs, Semiconductor

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