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ap20gt60i.pdf Principales características:

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AP20GT60I RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +20 V IC@TC=25oC Collector Current 40 A IC@TC=100oC Collector Current 20 A ICM Pulsed Collector Current1 160 A PD@TC=25oC Maximum Power Dissipation 25 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 Notes 1.Pulse width limited by Max. junction temperature . Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-Case 5 /W Rthj-a Thermal Resistance Junction-Ambient 65 /W Electrical Characteristics@Tj=25

 

Keywords - ALL TRANSISTORS. Principales características

 ap20gt60i.pdf Design, MOSFET, Power

 ap20gt60i.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ap20gt60i.pdf Database, Innovation, IC, Electricity

 

 

 


 
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