ap4435gm-hf.pdf Principales características:
AP4435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 20m D Fast Switching Characteristic ID -9A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage + 20 V ID@TA=25 Continuous Drain Current3 -9 A ID@TA=70 Continuous Drain Current3 -7.3 A IDM Pulsed Drain Current1 -50 A PD@TA=25 Total
Keywords - ALL TRANSISTORS. Principales características
ap4435gm-hf.pdf Design, MOSFET, Power
ap4435gm-hf.pdf RoHS Compliant, Service, Triacs, Semiconductor
ap4435gm-hf.pdf Database, Innovation, IC, Electricity
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