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ap4435gyt-hf.pdf Principales características:

AP4435GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK 3x3 package is special for DC-DC converters S S application and lower 1.0mm profile with backside heat sink. S G PMPAK 3x3 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage +25 V ID@TA=25 Continuous Drain Current3 -11 A ID@TA=70 Continuous Drain Current3 -8.7 A IDM Pulsed Drain Current1 -40 A PD@TA=25 Total Power Dissipation 3.57 W TSTG Storage Tempera

Keywords - ALL TRANSISTORS. Principales características

 ap4435gyt-hf.pdf Design, MOSFET, Power

 ap4435gyt-hf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ap4435gyt-hf.pdf Database, Innovation, IC, Electricity