apt13gp120kg.pdf datasheet:

APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alternative to a Power MOSFET. C G Low Conduction Loss 100 kHz operation @ 600V, 10A C E Low Gate Charge 50 kHz operation @ 600V, 16A G Ultrafast Tail Current shutoff RBSOA Rated E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT13GP120K UNIT VCES Collector-Emitter Voltage 1200 20 VGE Gate-Emitter Voltage Volts 30 VGEM Gate-Emitter Voltage Transient IC1 Continuous Collector Current @ TC = 25 C 41 IC2 Continuous C