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apt15gp60bdq1g.pdf Principales características:

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 200 kHz operation @ 400V, 12A G Ultrafast Tail Current shutoff SSOA rated E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. UNIT Symbol Parameter APT15GP60BDQ1 VCES Collector-Emitter Voltage 600 Volts VGE Gate-Emitter Voltage 20 IC1 Continuous Collector Current @ TC = 25 C 56 IC2 Continuous Collector Current @ TC = 110 C Amps 27 1 ICM Pulsed Collector Current @ TC = 150 C 65 Switching Safe Operati

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