fte15c35g.pdf Principales características:

fte15c35gfte15c35g

FTE15C35G 350V N+P Dual Channel MOSFETs General Features Proprietary Advanced Planar Technology BV R (Max.) I DSX DS(ON) D Rugged Polysilicon Gate Cell Structure Fast Switching Speed 350V 15 300mA RoHS Compliant Halogen-free available -350V 30 -200mA SOP-8 D1 D1 D2 D1 Applications D2 D2 Power Management G1 G1 G2 Load Switch S1 Motor Driver S2 S1 S2 G2 Ordering Information Part Number Package Marking Remark FTE15C35G SOP-8 15C35 Halogen Free Absolute Maximum Ratings(T =25 C unless otherwise noted) A Symbol Parameter N channel P channel Unit 350 V Drain-to-Source Voltage[1] -350 V DSS V Gate-to-Source Voltage 20 20 V GS I Continuous Drain Current 0.3 -0.2 A D I 300us Pulsed Drain Current Tested[2] 1.2 -0.8 A DP P Power Dissipation 2.5 W D -55 to 150 T and T Operating and Sto

 

Keywords - ALL TRANSISTORS. Principales características

 fte15c35g.pdf Design, MOSFET, Power

 fte15c35g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fte15c35g.pdf Database, Innovation, IC, Electricity