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asdm30p100kq.pdf Principales características:

ASDM30P100KQ -30V P-Channel MOSFET Product Summary General Features Advanced groove technology is adopted BVDSS -30 V Provide excellent R DS(ON) RDS(on).Typ.@VGS=-10V m 5.0 Low gate charge and operate at low gate voltage Application ID -100 A Lithium battery protection Wireless impact Mobile phone fast charging Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25 unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current T = 25 -100 A C ID Continuous Drain Current T = 100 -59 A C IDM Pulsed Drain Current note1 -400 A EAS Single Pulsed Avalanche Energy note2 210 mJ PD Power Dissipation T = 25 109 W C TJ, TSTG Operating and Storage Temperature Range -55 to +175 3.0 DEC 2018 Version1.0 1/7 Ascend Semicondut

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