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ASDM3416EZA 20V N-Channel MOSFET Product Summary General Description Trench Power LV MOSFET technology V DS 20 V High Power and current handing capability ESD Protected Up to 3.5KV (HBM) R DS(on),Typ@ VGS=4.5 V 16 m Applications I D A 7.0 PWM application Load switch Absolute Maximum Ratings (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS 12 V TA=25 @ Steady State 7.0 Drain Current ID A TA=70 @ Steady State 5.6 Pulsed Drain Current A IDM 28 A Total Power Dissipation @ TA=25 PD 1.3 W Thermal Resistance Junction-to-Ambient @ Steady State R JA 96 / W Junction and Storage Temperature Range TJ ,TSTG -55 +150 DEC 2018 Version2.0 1/7 Ascend Semicondutor Co.,Ltd ASDM3416EZA 20V N-Channel MOSFET Electrical Characteristics (T =25 unless oth

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