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ASDM60N50KQ 60V N-Channel MOSFET Product Summary FEATURE l Low gate charge V DS 60 V l Low C iss l Fast switching R DS(on),Typ@ VGS=10 V 8.5 m l 100% avalanche tested I D 50 A l Improved dv/dt capability Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 60 V VDS Gate-Source Voltage 20 V VGS Drain Current-Continuous 50 A I D Drain Current-Continuous(TC=100 ) ID (100 ) 42 A Pulsed Drain Current 200 A I DM Maximum Power Dissipation 62.5 W P D Derating factor 0.73 W/ (Note 5) Single pulse avalanche energy EAS 31 mJ Operating Junction and Storage Temperature Range -55 To 150 T ,T J STG 2.0 NOV 2018 Version1.0 1/9 Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET Electrical Characteristics (T =25 ,unless otherwise

 

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