asdm60n70q.pdf Principales características:

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ASDM60N70Q 60V N-CHANNEL MOSFET Product Summary FEATURES Trench Power DTMOS Technology V 60 V DSS Low RDS(ON) R 6.5 m DS(ON)-Typ@VGS=10V Low Gate Charge I 64 A D Optimized for Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Top View DFN5*6-8 N-Channel Absolute Maximum Ratings TC = 25 C, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 60 V Continuous Drain Current ID 64 A Pulsed Drain Current (note1) IDM 256 A Gate-Source Voltage VGSS 20 V Single Pulse Avalanche Energy (note2) EAS 65 mJ Avalanche Current (note1) IAS 36 A Power Dissipation (TC = 25 C) PD 56.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 +150 C Thermal Resistance Parameter Symbol

 

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