asdm68n80kq.pdf Principales características:

asdm68n80kqasdm68n80kq

ASDM68N80KQ 68V N-Channel MOSFET Features Product Summary Trench Power Technology V DS 68 V Low RDS(ON) Low Gate Charge R DS(on),Typ@ VGS=10 V 7.7 m Optimized for Fast-switching Applications I D 80 A Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial TO-252 Schematic Diagram Absolute Maximum Ratings TC = 25 C, unless otherwise noted unless Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 68 V TC = 25 C 80 Continuous Drain Current ID A TC = 100 C 49 Pulsed Drain Current (note1) I 320 A Pulsed Drain Current (note1) IDM 280 A (note1) note1) Gate-Source Voltage VGSS 20 V Single Pulse Avalanche Energy (note2) EAS 79 mJ (note2) Avalanche Current IAs 23 A TC = 25 C 120 W Power Dissipation (note3) PD TC = 100 C 60 W Operating Junction and Stor

 

Keywords - ALL TRANSISTORS. Principales características

 asdm68n80kq.pdf Design, MOSFET, Power

 asdm68n80kq.pdf RoHS Compliant, Service, Triacs, Semiconductor

 asdm68n80kq.pdf Database, Innovation, IC, Electricity