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agm056n08c.pdf Principales características:

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AGM056N08C General Description Product Summary The AGM056N08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 4.4m 120A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width ---- ---- AGM056N08C AGM056N08C TO-220 1000 Table 1. Absolute Maximum Ratings (TC=25 ) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V V 85

 

Keywords - ALL TRANSISTORS. Principales características

 agm056n08c.pdf Design, MOSFET, Power

 agm056n08c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 agm056n08c.pdf Database, Innovation, IC, Electricity

 

 
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