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agm065n10d.pdf Principales características:

AGM065N10D General Description The AGM065N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.8m 95A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width AGM065N10D AGM065N10D TO-252 330mm 16mm 2500 Table1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Valu

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 agm065n10d.pdf Design, MOSFET, Power

 agm065n10d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 agm065n10d.pdf Database, Innovation, IC, Electricity