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AGMH6018C General Description Product Summary The AGMH6018C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 60V 1.9m 150A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize conductive loss DS(ON) Low Gate Charge for fast switching Low Thermal resistance 100% Avalanche tested 100% DVDS tested Application Electronic Ballast Electronic Transformer Switch Mode Power Supply Package Marking and Ordering Information Quantity Device Marking Device Device Package Reel Size Tape width --- --- AGMH6018C AGMH6018C TO-220 1000 Table1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Value Unit VDS Drain-Sourc

 

Keywords - ALL TRANSISTORS. Principales características

 agmh6018c.pdf Design, MOSFET, Power

 agmh6018c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 agmh6018c.pdf Database, Innovation, IC, Electricity

 

 
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