Todos los transistores

adq120n080g2 adw120n080g2 adg120n080g2.pdf Principales características:

ADQ120N080G2, ADW120N080G2, ADG120N080G2 1200V N-Channel Silicon Carbide Power MOSFET 1. Applications Asymmetrical Bridge Converter Inverter Single Switch Forward Flyback 2. Features Low drain-source on-resistance RDS(ON) = 80m (typ.) Easy to control Gate switching Enhancement mode Vth = 2 to 4 V Table 1 Key Performance Parameters Parameter Value Unit V 1200 V DS @ T j,max R 100 DS(on),max m Q 58 nC g,typ I 94 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking ADQ120N080G2 TO-247-4L ADQ120N080G2 ADW120N080G2 TO-247-3L ADW120N080G2 ADG120N080G2 TO-263-7L ADG120N080G2 TO-247-4L TO-247-3L TO-263-7L ADQ120N080G2, ADW120N080G2, ADG120N080G2 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max.

Keywords - ALL TRANSISTORS. Principales características

 adq120n080g2 adw120n080g2 adg120n080g2.pdf Design, MOSFET, Power

 adq120n080g2 adw120n080g2 adg120n080g2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 adq120n080g2 adw120n080g2 adg120n080g2.pdf Database, Innovation, IC, Electricity