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asa60r090efda asw60r090efda.pdf Principales características:

ASA60R090EFDA ASW60R090EFDA ASW60R090EFD MOSFET Silicon N-Channel MOS 1. Applications Soft Switching Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. phase-shift-bridge(ZVS),LLC Application-Server Power, Telecom Power, EV Charging, Solar inverter. 2. Features Low drain-source on-resistance RDS(ON) = 0.080 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 5V Table 1 Key Performance Parameters Parameter Value Unit V 650 V DS @ T j,max R 90 DS(on),max m Q 65.32 nC g,typ I 141 A D,pulse Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASA60R090EFDA TO220F ASA60R090EFDA ASW60R090EFDA TO247-3L ASW60R090EFDA TO220F TO247-3L ASA60R090EFDA ASW60R090EFDA ASW60R090EFD 1 Maximum ratings at Tj = 25 C,

Keywords - ALL TRANSISTORS. Principales características

 asa60r090efda asw60r090efda.pdf Design, MOSFET, Power

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