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asa60r210e.pdf Principales características:

ASA60R210E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch,single-ended flyback ortwo-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor,LCD & PDP TV,LED Lighting,Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.18 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 650 V DS @ T j,max R 210 DS(on),max m Q 32.23 nC g,typ I 60 A D,pulse 3. Packaging and Internal Circuit Released ASA60R210E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID A - 20 TC=25 C Pulsed drain curren

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