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asa65r220e asb65r220e.pdf Principales características:

ASA65R220E, ASB65R220E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback ortwo-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor, LCD & PDP TV, LED Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.19 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @T j,max R 220 m DS(on),max Q 32.23 nC g,typ I 60 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking ASA65R220E TO220F ASA65R220E ASB65R220E TO263 ASB65R220E TO220F TO263 ASA65R220E, ASB65R220E 1 Maximum ratings at Tj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter

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