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asa65r280e asd65r280e asm65r280e.pdf Principales características:

ASA65R280E, ASD65R280E, ASM65R280E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 240m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @ T j,max R 280 DS(on),max m Q 19.4 nC g,typ I 45 A D,pulse Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASA65R280E TO220F ASA65R280E ASD65R280E TO252 ASD65R280E ASM65R280E DFN8X8 ASM65R280E TO220F TO252 DFN8X8 ASA65R280E, ASD65R280E, ASM65R280E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Ty

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