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asd65r270e asa65r270e.pdf Principales características:

ASD65R270E, ASA65R270E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 236m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 270 m Qg,typ 23.2 nC ID,pulse 58 A Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASD65R270E TO252 ASD65R270E ASA65R270E TO220F ASA65R270E TO220F TO252 ASD65R270E, ASA65R270E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) I A D - 15 TC=25 C ID,pulse

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