asw65r041e.pdf Principales características:
ASW65R041E MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC bridge(ZVS),LLC Application-Server Power, Telecom Power, EV Charging, Solar inverter. Solar inverter. 2. Features Low drain-source on-resistance RDS(ON) = 0.034 (typ.) resistance RDS(ON) = 0.034 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @ T j,max R 41 DS(on),max m Q 133.5 nC g,typ I 240 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking ASW65R041E TO247 ASW65R041E TO247 ASW65R041E 1 Maximum ratings at Tj = 25 C, unless otherwise specified
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