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ASW65R041EFDA MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC bridge(ZVS),LLC Application-Server Power, Telecom Power,EV Charging, Solar inverter Solar inverter. 2. Features Low drain-source on-resistance RDS(ON) = 0. resistance RDS(ON) = 0.035 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 5 V Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @ T j,max R 41 DS(on),max m Q 290.6 nC g,typ I 240 A D,pulse Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASW65R041EFDA TO247 ASW65R041EFDA AS TO247 Released ASW65R041EFDA 1 Maximumratings at Tj = 25 C, u

 

Keywords - ALL TRANSISTORS. Principales características

 asw65r041efda.pdf Design, MOSFET, Power

 asw65r041efda.pdf RoHS Compliant, Service, Triacs, Semiconductor

 asw65r041efda.pdf Database, Innovation, IC, Electricity

 

 

 


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