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asw65r046efd asq65r046efd asr65r046efd.pdf Principales características:

ASW65R046EFD, ASQ65R046EFD, ASR65R046EFD MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 39m (typ.) Easy to control Gate switching Enhancement mode Vth = 3.2 to 4.5 V Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @ T j,max R 46 DS(on),max m Q 111 nC g,typ I 236 A D,pulse Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASW65R046EFD TO247-3L ASW65R046EFD ASQ65R046EFD TO247-4L ASQ65R046EFD ASR65R046EFD TOLL-8L ASR65R046EFD TO247-3L TO247-4L ASW65R046EFD, ASQ65R046EFD, ASR65R046EFD TOLL ASW65R046EFD, ASQ65R046EFD, ASR65R046EFD 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Max

Keywords - ALL TRANSISTORS. Principales características

 asw65r046efd asq65r046efd asr65r046efd.pdf Design, MOSFET, Power

 asw65r046efd asq65r046efd asr65r046efd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 asw65r046efd asq65r046efd asr65r046efd.pdf Database, Innovation, IC, Electricity