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asw65r110e.pdf Principales características:

ASW65R110E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge and full bridge topologies. Server power,Telecom power,EV charging, EV charging, Solar inverter,UPS Application. 2. Features Low drain-source on-resistance RDS(ON) resistance RDS(ON) = 0.095 (typ.) Easy to control Gate switching 4.2 V Enhancement mode Vth = 2.8 to 4.2 Table 1 Key Performance Parameters Parameter Value Unit V 700 V DS @ T j,max R 110 DS(on),max m Q 52 nC g,typ I 90 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking ASW65R110E TO247 ASW65R110E TO247 Released ASW65R110E 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbo

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