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aun036n10 aup039n10 aua039n10 aub039n10.pdf Principales características:

AUN036N10, AUP039N10, AUA039N10, AUB039N10 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance DFN5x6 RDS(ON) = 3.3m (typ.) TO220&220F&263 RDS(ON) = 3.6m (typ.) Easy to control Gate switching Enhancement mode Vth = 1.2 to 2.5 V Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 3.6 DS(on),max DFN5X6 m R 3.9 DS(on),max TO220 m Q 65 nC g,typ I 437 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking AUN036N10 DFN5X6 AUN036N10 AUP039N10 TO220 AUP039N10 AUA039N10 TO220F AUA039N10 AUB039N10 TO263 AUB039N10 TO220F TO263 TO220 DFN5x6 AUN036N10, AUP039N10, AUA039N10, AUB039N10 1 Maximum ratings at Tj = 25 C, unless otherw

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 aun036n10 aup039n10 aua039n10 aub039n10.pdf Design, MOSFET, Power

 aun036n10 aup039n10 aua039n10 aub039n10.pdf RoHS Compliant, Service, Triacs, Semiconductor

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