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aup026n085 aub026n085.pdf Principales características:

AUP026N085, AUB026N085 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 2.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Value Unit V 85 V DS @ T j,max R 2.6 DS(on),max m Q 152 nC g,typ I 998 A D,pulse 3. Packaging and Internal Circuit Part Name Package Marking AUP026N085 TO220 AUP026N085 AUB026N085 TO263 AUB026N085 TO263 TO220 AUP026N085, AUB026N085 1 Maximum ratings At Tj= 25 C, unless otherwise specified Table 2 Maximum ratings Values Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Continuous drain current at silicon1) I A D - 247 T =25

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