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ss8050-l ss8050-h ss8050-j.pdf Principales características:

Jingdao Microelectronics co.LTD SS8050 SS8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V 1.5 A Collector Current Continuous IC mW Collector Power Dissipation PC 300 Thermal Resistance From Junction RthJA 417 /W To Ambient Operation Junction and Storage TJ,Tstg -55 +150 Temperature Range CLASSIFICATION OF hFE1 Rank L H J 300-400 Range 120-200 200-350 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.) Symbol Typ Test conditions Max Unit Min Parameter V(BR)CBO IC = 100uA, IE = 0 V Collector-base breakdown voltage 40 IC = 0.1 mA,

Keywords - ALL TRANSISTORS. Principales características

 ss8050-l ss8050-h ss8050-j.pdf Design, MOSFET, Power

 ss8050-l ss8050-h ss8050-j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050-l ss8050-h ss8050-j.pdf Database, Innovation, IC, Electricity