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mmbtss8050l mmbtss8050h mmbtss8050j.pdf Principales características:

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MMBTSS8050 NPN Silicon General Purpose Transistors Features SOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Mechanical data Epoxy UL94-V0 rated flame retardant (B) (C) Case Molded plastic, SOT-23 (A) Terminals Solder plated, solderable per MIL-STD-750, Method 2026 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) Mounting Position Any 0.108 (2.75) 0.083 (2.10) Weight Approximated 0.008 gram Maximum ratings (AT TA=25oC unless otherwise noted) 0.051 (1.30) 0.035 (0.89) PARAMETER Symbol UNIT MAX. Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Dimensions in inches and (millimeters) Emitter-base voltage VEBO 5.0 V Collector current-continuoun IC mAdc 1500 Thermal Characteristics PARAMETER Symbol MIN. TYP. MAX. UNIT PD mW

 

Keywords - ALL TRANSISTORS. Principales características

 mmbtss8050l mmbtss8050h mmbtss8050j.pdf Design, MOSFET, Power

 mmbtss8050l mmbtss8050h mmbtss8050j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbtss8050l mmbtss8050h mmbtss8050j.pdf Database, Innovation, IC, Electricity

 

 
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