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dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf Principales características:

DH025N03/DH025N03F/DH025N03E DH025N03I/DH025N03B/DH025N03D 150A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.5m DS(on) (TYP) standard. 1 3 S I = 150A D 2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V test DS TO-220C TO-220F TO-262 3 Applications Power switching applications Inverter management system Electric tools Automotive electronics TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Ratings (Tc=25 ,unless otherwise noted) Rating DH025N03 Parameter Symbol Units DH025N0 DH025N03I/DH025N03E

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 dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf Design, MOSFET, Power

 dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf Database, Innovation, IC, Electricity