dh100p30d.pdf datasheet:

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package Marking Tube/Reel Qty(pcs)DH100P30D TO-252 DH100P30D Tape & Reel 2500/boxRev 1.0 Pg 1/7 DONGHAI SemiconductorDH100P30D -100V/33m/-35A P-MOSFET Absolute Maximum RatingsParameter Symbol Value UnitVDSDrain-source voltage -100 VVGSGate-Source voltage 20 VContinuous drain currentIDTC = 25 AC-35TC = 100C-22Pulsed drain current (TC = 25 ID pulseC, tp limited by Tjmax)-140 AEASAvalanche energy, single pulse (L=0.5mH, Rg=25)[