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dh160p04d.pdf datasheet:

dh160p04ddh160p04d

DH160P04D-50A -40V P-channel Enhancement Mode Power MOSFET1 DescriptionThe P-channel enhancement mode power mosfets usedV = -40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 13mDS(on) (TYP)standard.I = -50AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Power switching applications DC-DC converters Full bridge controlTO-252B4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V -40 VDSSGate-to-Source Voltage V 20 VGSST =25 -50 ACContinuous DrainIDCurrentT =100 -35 ACPulsed Drain Current(1) I -155 A

 

Keywords - ALL TRANSISTORS DATASHEET

 dh160p04d.pdf Design, MOSFET, Power

 dh160p04d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dh160p04d.pdf Database, Innovation, IC, Electricity

 

 
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